advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 20v capable of 1.8v gate drive r ds(on) 21m fast switching characteristic i d 25a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 6 /w rthj-a 62.5 /w data and specifications subject to change without notice total power dissipation 20.8 parameter storage temperature range operating junction temperature range -55 to 150 thermal data continuous drain current, v gs @ 10v 16 pulsed drain current 1 100 gate-source voltage + 8 continuous drain current, v gs @ 10v 25 ap4434agh-hf parameter rating 201106231 halogen-free product 1 -55 to 150 maximum thermal resistance, junction-ambient (pcb mount) 3 total power dissipation 3 2 drain-source voltage 20 g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. g d s to-252(h) the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =12a - - 21 m v gs =2.5v, i d =8a - - 28 m v gs =1.8v, i d =4a - - 40 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.25 - 1 v g fs forward transconductance v ds =5v, i d =12a - 36 - s i dss drain-source leakage current v ds =16v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 8v, v ds =0v - - + 100 na q g total gate charge i d =12a - 13.5 21.5 nc q gs gate-source charge v ds =16v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6.5 - nc t d(on) turn-on delay time v ds =10v - 10 - ns t r rise time i d =12a - 55 - ns t d(off) turn-off delay time r g =3.3 -22- ns t f fall time v gs =5v - 10 - ns c iss input capacitance v gs =0v - 750 1200 pf c oss output capacitance v ds =20v - 130 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf r g gate resistance f=1.0mhz - 1.5 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =12a, v gs =0v - - 1.2 v t rr reverse recovery time i s =7a, v gs =0 v , - 22 - ns q rr reverse recovery charge di/dt=100a/s - 11 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ap4434agh-hf 2
a p4434agh-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 60 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 5.0v 4.5v 3.5v 2.5v v g =1.8v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =12a v g =4.5v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.6 1.2 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 20 40 60 80 100 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 5.0v 4.5v 3.5v 2.5v v g =1.8v i d =1ma 10 20 30 40 50 60 0123456 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =4a t a =25
ap4434agh-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g 4.5v q gs q gd q g charge 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 1 2 3 4 5 6 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =12a v ds =16v 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 10 20 30 01234 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v operation in this area limited by r ds(on)
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